Low-temperature thin-film indium bonding for reliable wafer-level hermetic MEMS packaging
Identifieur interne : 000941 ( Main/Repository ); précédent : 000940; suivant : 000942Low-temperature thin-film indium bonding for reliable wafer-level hermetic MEMS packaging
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Abstract
This paper reports on low-temperature and hermetic thin-film indium bonding for wafer-level encapsulation and packaging of delicate and temperature sensitive devices. This indium-bonding technology enables bonding of surface materials commonly used in MEMS technology. The temperature is kept below 140 °C for all process steps and no surface treatment is applied before and during bonding. This bonding technology allows hermetic sealing at 140 °C with a leak rate below 4 × 10-12 mbar 1 s-1 at room temperature. The tensile strength of the bonds up to 25 MPa goes along with a very high yield.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Low-temperature thin-film indium bonding for reliable wafer-level hermetic MEMS packaging</title><author><name sortKey="Straessle, R" uniqKey="Straessle R">R. Straessle</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Sensors, Actuators and Microsystems Laboratory (SAMLAB), École Polytechnique Fédérale de Lausanne (EPFL)</s1><s2>Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Suisse</country><placeName><settlement type="city">Lausanne</settlement><region nuts="3" type="region">Canton de Vaud</region></placeName><orgName type="university">École polytechnique fédérale de Lausanne</orgName></affiliation></author><author><name sortKey="Petremand, Y" uniqKey="Petremand Y">Y. Petremand</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Sensors, Actuators and Microsystems Laboratory (SAMLAB), École Polytechnique Fédérale de Lausanne (EPFL)</s1><s2>Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Suisse</country><placeName><settlement type="city">Lausanne</settlement><region nuts="3" type="region">Canton de Vaud</region></placeName><orgName type="university">École polytechnique fédérale de Lausanne</orgName></affiliation></author><author><name sortKey="Briand, D" uniqKey="Briand D">D. Briand</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Sensors, Actuators and Microsystems Laboratory (SAMLAB), École Polytechnique Fédérale de Lausanne (EPFL)</s1><s2>Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Suisse</country><placeName><settlement type="city">Lausanne</settlement><region nuts="3" type="region">Canton de Vaud</region></placeName><orgName type="university">École polytechnique fédérale de Lausanne</orgName></affiliation></author><author><name sortKey="Dadras, M" uniqKey="Dadras M">M. Dadras</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre Suisse d'Electronique et de Microtechnique (CSEM)</s1><s2>Neuchâtel</s2><s3>CHE</s3><sZ>4 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>Centre Suisse d'Electronique et de Microtechnique (CSEM)</wicri:noRegion></affiliation></author><author><name sortKey="De Rooij, N F" uniqKey="De Rooij N">N. F. De Rooij</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Sensors, Actuators and Microsystems Laboratory (SAMLAB), École Polytechnique Fédérale de Lausanne (EPFL)</s1><s2>Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Suisse</country><placeName><settlement type="city">Lausanne</settlement><region nuts="3" type="region">Canton de Vaud</region></placeName><orgName type="university">École polytechnique fédérale de Lausanne</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0267277</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0267277 INIST</idno><idno type="RBID">Pascal:13-0267277</idno><idno type="wicri:Area/Main/Corpus">000938</idno><idno type="wicri:Area/Main/Repository">000941</idno></publicationStmt><seriesStmt><idno type="ISSN">0960-1317</idno><title level="j" type="abbreviated">J. micromech. microeng. : (Print)</title><title level="j" type="main">Journal of micromechanics and microengineering : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Adhesion</term><term>Bonding</term><term>Electronic packaging</term><term>Hermetic sealing</term><term>Microelectromechanical device</term><term>Tensile strength</term><term>Thin films</term><term>Wafer bonding</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Fixation pastille</term><term>Adhérence</term><term>Scellement hermétique</term><term>Résistance traction</term><term>Packaging électronique</term><term>Liaison matériau</term><term>Couche mince</term><term>Dispositif microélectromécanique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper reports on low-temperature and hermetic thin-film indium bonding for wafer-level encapsulation and packaging of delicate and temperature sensitive devices. This indium-bonding technology enables bonding of surface materials commonly used in MEMS technology. The temperature is kept below 140 °C for all process steps and no surface treatment is applied before and during bonding. This bonding technology allows hermetic sealing at 140 °C with a leak rate below 4 × 10<sup>-12</sup> mbar 1 s<sup>-1</sup> at room temperature. The tensile strength of the bonds up to 25 MPa goes along with a very high yield.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0960-1317</s0></fA01><fA03 i2="1"><s0>J. micromech. microeng. : (Print)</s0></fA03><fA05><s2>23</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Low-temperature thin-film indium bonding for reliable wafer-level hermetic MEMS packaging</s1></fA08><fA11 i1="01" i2="1"><s1>STRAESSLE (R.)</s1></fA11><fA11 i1="02" i2="1"><s1>PETREMAND (Y.)</s1></fA11><fA11 i1="03" i2="1"><s1>BRIAND (D.)</s1></fA11><fA11 i1="04" i2="1"><s1>DADRAS (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>DE ROOIJ (N. F.)</s1></fA11><fA14 i1="01"><s1>Sensors, Actuators and Microsystems Laboratory (SAMLAB), École Polytechnique Fédérale de Lausanne (EPFL)</s1><s2>Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Centre Suisse d'Electronique et de Microtechnique (CSEM)</s1><s2>Neuchâtel</s2><s3>CHE</s3><sZ>4 aut.</sZ></fA14><fA20><s2>075007.1-075007.8</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22483</s2><s5>354000503633660150</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0267277</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of micromechanics and microengineering : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper reports on low-temperature and hermetic thin-film indium bonding for wafer-level encapsulation and packaging of delicate and temperature sensitive devices. This indium-bonding technology enables bonding of surface materials commonly used in MEMS technology. The temperature is kept below 140 °C for all process steps and no surface treatment is applied before and during bonding. This bonding technology allows hermetic sealing at 140 °C with a leak rate below 4 × 10<sup>-12</sup> mbar 1 s<sup>-1</sup> at room temperature. The tensile strength of the bonds up to 25 MPa goes along with a very high yield.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00G10C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Fixation pastille</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Wafer bonding</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Adhérence</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Adhesion</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Scellement hermétique</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Hermetic sealing</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Sellado hermético</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Résistance traction</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Tensile strength</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Packaging électronique</s0><s5>12</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Electronic packaging</s0><s5>12</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Packaging electrónico</s0><s5>12</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Liaison matériau</s0><s5>13</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Bonding</s0><s5>13</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Couche mince</s0><s5>15</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Thin films</s0><s5>15</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Dispositif microélectromécanique</s0><s5>16</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Microelectromechanical device</s0><s5>16</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Dispositivo microelectromecánico</s0><s5>16</s5></fC03><fN21><s1>252</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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